摘要
用扫描探针显微镜(SPM)观察了能量76keV、剂量1.7×10cm-2的N团簇离子注入Si(111)单晶表面的形貌。发现在此条件下,注入层已直接转化成具有一定粒度分布的纳米晶结构,并测量了形成晶粒的尺度及分布。用红外吸收实验检测了该实样的光学特性。实验表明,该试样对频带很宽的红外光产生了很强的均匀吸收,在红外光区,其透光度均保持在10%左右,表明其注入层已形成一种品质优良的吸光材料。
The surface morphology of monocrystalline Si(l11) implanted by a N10+ cluster ion of 76 keV at a dose of 1.7×1017 cm-2 was observed using a scaning probe microscope. It was found that the implanted layer directly transformed from monocrystalline into a nanocrystal structure in this condition and its crystallite dimension was also measured. The infrared absorption experiment indicated that the samples intensely and uniformly absorbed infrared light of both near and far infrared regions with a very wide frequency band, and the transmission of about 10% was always kept. The preliminary study indicated that an excellent light absorption material was formed in the implanted layer.
出处
《核技术》
EI
CAS
CSCD
北大核心
2005年第5期333-336,共4页
Nuclear Techniques
基金
国家自然科学基金(批准号:10175041
10375040)资助
关键词
氮团簇注入
硅单晶
纳米晶结构
红外吸收谱
Cluster ion implantation, Monocrystalline silicon, Nanocrystal structure, Infrared absorption spectra
