摘要
对InGaAsP/GaAs有源区无铝的808 nm大功率半导体激光器进行了高温恒流加速老化实验,得到了器件在高温条件下的寿命,利用外推公式推算出激光器在室温条件下工作的寿命可超过30 000 h。讨论了实验中出现的灾变退化现象,提出了防止灾变退化的几种方法。
Accelerated aging tests were carried out under the conditions of constant current and high-temperatures for 808 nm high-power Al-free InGaAsP/GaAs lasers. Based on the mean lifetimes of the laser diodes at high-temperatures, the mean lifetimes of lasers at room temperature were extrapolated to be in excess of 30000 h. In addition, the catastrophic degradation modes and several methods to prevent this degradation mode are discussed.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2005年第2期97-99,共3页
Semiconductor Optoelectronics
关键词
大功率
半导体激光器
加速老化
可靠性
灾变退化
high-power
semiconductor lasers
accelerated a ging
reliability
catastrophic degradation
