摘要
用俄歇子能谱（AES）研究了热丝法生长金刚石膜中未经划痕处理的单晶硅衬底在不同沉积时间下的表面结构及Si，C，O元素浓度的深度分布。结果表明：在沉积过程中，随沉积时间增加时，基材表面C浓度增加，O浓度下降，但SiC过渡层的生长缓慢。700℃沉积4h时仍无结构完整的SiC层生成，这是表面SiO2层阻碍了SiC的形成。分析了不经划痕处理的基材形核率低的原因。用高分辨电镜（HREM）观察了生长良好的金刚石膜的膜—基界面，发现没有SiO2层存在。
Auger electron spectroscopy (AES) is used to study the surface structure and the depth distribution of Si, C, O elements concentration changing with deposition time on the unscratched single crystalline Si (100) substrate. The results indicate that the C concentration on the surface increases with the deposition time while the O concentration decreases.but the growth rate of SiC transitional layer is very slow due to the resistance of the SiO2 layer. The reason why the nucleation rate is slow on the unscratched surface is discussed. THe high resolution electron microscopy is used to observe the diamond-substrate interface with high quality diamond film,no SiO2 layer is found.
出处
《真空科学与技术》
CSCD
1994年第6期396-400,共5页
Vacuum Science and Technology
关键词
表面结构
单晶硅衬底
生长速率
氧化硅
Surface structure,Single crystalline Si (100) substrate, Growth rate,Transitional layer
