摘要
采用低功率直流磁控溅射法制备了GeSb2Te4薄膜,利用扫描电子显微镜、X射线衍射仪和原子力显微镜(AFM)分析了薄膜的微观结构和相组成,研究了薄膜表面的分形特征.结果表明:沉积态GeSb2Te4薄膜为无规则、无择优取向的非晶材料;薄膜表面形貌AFM图像具有分形特征,基于自行编制的采用盒计数法求解随机分形维数的C语言程序,计算得到沉积态GeSb2Te4薄膜的分形维数为1.93;针对一维和二维随机分形多重分形谱的计算表明,沉积态GeSb2Te4薄膜满足分形的标度不变性;通过对沉积态和退火态薄膜进行多维分形谱计算,发现经过230℃退火处理的薄膜样品的多维分形谱较窄且晶化分布均匀.
GeSb2Te4 film was prepared on Si substrate using low power direct current magnetron sputtering. The resulting GeSb2Te4 film was characterized by means of scanning electron microscopy, X ray diffraction, and atomic force microscopy. Moreover, a program for calculating the fractal dimension was designed according to the box counting method. It was found that the as-deposited film had amorphous structure and random distribution, while it had no preferential orientation. The topography of the film was of fractal feature. The fractal dimension of the as-deposited GeSb2Te4 film was 1.93. The one- and two-dimensional random multiple fractal spectra showed that the as-deposited GeSb2Te4 film satisfied the scalar invariability. In comparison with the as-deposited GeSb2Te4 film, the multifractal spectra of the film annealed at 230°C was narrow and had more uniform crystallization.
出处
《摩擦学学报》
EI
CAS
CSCD
北大核心
2005年第2期149-153,共5页
Tribology
基金
江苏省教育厅基金资助项目(03KJD460066).
关键词
GeSb2Te4
薄膜
分形维数
多维分形谱
Annealing
Calculations
Crystallization
Fractals
Magnetron sputtering
One dimensional
Scanning electron microscopy
Two dimensional
