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水基前驱体法制备BST铁电薄膜的研究 被引量:2

Ba_(0.7)Sr_(0.3)TiO_3 Thin Film Fabrication by Water-based Precursors
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摘要 Ba1-SrxTiO3(BST)薄膜具有非线性强、漏电流小、不易疲劳等特点,在高密度动态随机存储器的应用,受到x了极大关注。以水基溶液为前驱体,调整Ti(OC4H9)4与H2O的配比以改变溶胶的黏度,并采用旋涂法制备了BST铁电薄膜。对水基BST前驱体溶液进行了DSC/TG和XRD分析。实验表明,采用较高浓度的水基前驱体,有利于薄膜的形成和均匀性。薄膜的相结构研究表明,随着退火温度的上升,BST薄膜的结晶度上升,而晶粒尺寸随之略有下降。 Ba1- SrxTiO3 (BST) thin film is an important ferroelectric film for application in DRAM devices due to strong x nonlinear dielectricity, small leak current and fatigue characteristics. Using water-based solution as precursors, BST thin films were fabricated by spin coating technique. To obtain an homogenous and crack-less films, viscosity of the precursor solution was adjusted by changing the ratio of Ti(OC4H9)4 and H2O. The results show that the higher concentration of water-based precursor solution is beneficial to form a uniform thin film. Phase evolution by XRD indicated that crystallinity of BST thin film is increase but crystal size decrease a little as annealing temperature rising.
出处 《电子元件与材料》 CAS CSCD 北大核心 2005年第4期61-64,共4页 Electronic Components And Materials
关键词 无机非金属材料 BST薄膜 sol—gel 水基前驱体 钙钛矿相 inorganic non-metallic materials BST thin film sol-gel water-based precursor perovskite
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