摘要
在高频域，ＭＯＳＦＥＴ的分布参数对全集成ＭＯＳＦＥＴ－Ｃ滤波器的特性有很大影响，本文应用ＳＰＩＣＥ（Ⅱ）通用模拟电路程序，采用非理想运算放大器单极点电路模型，考虑到ＭＯＳＦＥＴ的寄生电容，对一个六阶切比雪夫低通滤波器全ＭＯＳＦＥＴ－Ｃ平衡结构应用传输线模型进行了仿真分析。
At high frequencies, the distributive parameters of MOSFET have great effects on the characteristics of fully integrated MOSFET-C filters. In this paper,full integrated balanced MOSFET -C sixth-order chebyshev lowpass filter is discussed. Its amplitudefrequency and phase-frequency characteristics of output voltage are simulated using the transmission line model by SPICE (Ⅱ) program while MOSFET parasitic Capacitances and Single-pole nonideal op amps model are.considered, and compared with those on ideal cases in which only discreted linear components and ideal op amps are emploied'.Some practical suggesition are proposed.
出处
《微电子学与计算机》
CSCD
北大核心
1994年第3期53-56,共4页
Microelectronics & Computer
关键词
低通滤波器
结构
分析
模拟
Balanced structure, Parasitic capacitances, Transmission line
