摘要
研究了金属氧化物Co2O3含量对ZnO压敏陶瓷中晶粒生长和电学性能的影响.分析了Co2O3含量对ZnO半导体陶瓷各种性能的改善,以及所产生缺陷类型.实验结果表明:随着Co2O3含量在0.6%～0.2%(质量分数)范围内的减少,ZnO压敏陶瓷的平均晶粒大小降低,工频耐受力提高,非线性系数增大,在一定程度上掩盖了ZnO晶粒本征缺陷对ZnO陶瓷电导率的影响,使半导体的电导率获得可控性.为获得产品优良的重复性和稳定性,以及降低成本起到十分重要的作用.
The effect of amount of metal oxide Co2O3 on the crystal growth & electrical performance of ZnO varistors are evaluated. It is an analysis made on improvement of Co2O3 content to various performances of ZnO semiconductor,as well as the defect type which may occur.The test result indicates that with decrease of the content of Co2O3 within the range of 0.6%～0.2%, the average crystal size of the ZnO varistor decreases,the power frequency voltage withstand ability increases,and the non-linear factor enhances,which conceals the negative effect of the essential of ZnO crystal on the ZnO ceramic conductance to some degree,and thus gain the control over the conductance for the semiconductor.It plays an important role in remaining excellent repetitiveness and stability of the product,and reducing the production cost.
出处
《电瓷避雷器》
CAS
2005年第1期32-34,共3页
Insulators and Surge Arresters
关键词
Co2O3
晶粒生长
电性能
工频耐受力
Co2O3
crystal growth
electrical performance
power frequency withstand capability
