摘要
本文介绍了生长Ｃｒ￣（３＋）：ＬｉＣａＡＩＦ＿６晶体所用原料的氟氢化处理和几种晶体生长工艺，获得了尺寸为Φ１０×１００ｍｍ及Φ２０×６０ｍｍ的完整单晶。对晶体成分及所含杂质进行了化学常量分析、光谱半定量分析和光电子能谱分析，讨论了晶体末端有时失透的可能原因。发现原料处理对高质量晶体的生长极为重要。
In this paper,the starting materials treatment and several growth technique of chromium doped colquiriite are presented. Up to Φ10 × 100mm and Φ20 × 60mm intact single crystals have been grown. Composition and impurities in the crystal were analysized by chemical analysis,semi-quantitative spectral analysis and X-ray photoelectron spectroscopy respectively. The opaqueness at the crystal end is discussed.The result show that the treatment of raw materials is crucial to growth of high quality crystal.
出处
《人工晶体学报》
EI
CAS
CSCD
1994年第3期243-247,共5页
Journal of Synthetic Crystals
关键词
氟铝酸钙锂
激光晶体
晶体生长
colquiriite
laser crystal
crystal pulling
crystal growth by gradient method
raw materials
opaqueness
