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碳/碳复合材料表面沉积SiC的形态和成分 被引量:1

MORPHOLOGY AND INGREDIENT OF SiC COATING ONC /CCOMPOSITES
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摘要 在PAN碳布和沥青基体碳的C/C复合材料表面涂复了SiC。用CH4和N,为载气的SiCl4作原料,用H2为稀释气,在两种气体混合比和三种温度下化学气相沉积SiC涂层。分析表明,涂层的主要元素有C,Si、Cl和微量Ca。电镜观察表明,涂层中C原子含量为62%时呈菜花状或云团状,而当C/Si比接近于1时,表面呈菠萝状。 SiC was coated on the surfaee of Carbon-Carbon composites prepared from the PAN carbon-cloth and pitch. CH4 and SiCl4 are used as raw material,N,as carrying gas for SiCl4 and H2 as dilution gas.CVD SiC coating is prepared with two kinds of ratio and three kinds of temperature.The main elements of coating are C, Si, Cl and traeed Ca from electronic probe,SEM observation revealed that, when the C content is 62%,the mornhology of SIC ap-pearance is cauliflower o:in cloud mass with poor oxidation resistance,and while C / Si ratio tends to l,the surfaee morphology is pineapple with increased oxidation resistanee. In addition,when the deposited temperature increases,the size of surfaee pellet becomes larger.
机构地区 西北工业大学
出处 《航空学报》 EI CAS CSCD 北大核心 1994年第11期1399-1402,共4页 Acta Aeronautica et Astronautica Sinica
关键词 碳化硅 涂层 碳-碳复合材料 成分 形态学 silicon carbides, coatings,carbon-arbon composites,composition,morphology
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  • 1刘荣军,张长瑞,周新贵,曹英斌,刘晓阳.CVD SiC致密表面涂层制备及表征[J].材料工程,2005,33(4):3-6. 被引量:14
  • 2邓清,肖鹏,熊翔.沉积温度对SiC涂层微观结构及组成的影响[J].粉末冶金材料科学与工程,2006,11(5):304-309. 被引量:9
  • 3张长瑞,刘荣军,曹英斌.沉积温度对CVD SiC涂层显微结构的影响[J].无机材料学报,2007,22(1):153-158. 被引量:15
  • 4DELFIAES P.Chemical vapor deposition and infiltration processes of carbon[J].Carbon,2002,40:641-657. 被引量:1
  • 5AGNES Oberlin.Pyrocarbons--Review[J].Carbon,2002,40:7-24. 被引量:1
  • 6DONG G L,HUTTINGER K J.Consideration of reaction mechanisms leading to pyrolytic carbon of different textures[J].Carbon,2002,40:2515-2528. 被引量:1
  • 7LOUMAGNE F,LANGLAIS F,NASLAIN R,et al.Physicochemical properties of SiC-based ceramics deposited by low pressure chemical vapor deposition from CH3 SiCl3-H2[J].Thin Solid Films,1995,254:75-82. 被引量:1
  • 8PEDERSEN H,LEONE S,HENRY A,et al.Very high epitaxial growth rate of SiC using MTS as chloride-based precursor[J].Surf Coat Tech,2007,201:8931-8934. 被引量:1
  • 9GANS M,DORVAL N,LEFEBVRE M,et al.In situ optical analysis of the gas phase during the deposition silicon carbide from methyltrichiorosilane[J].J Eleetrochem Soc,1996,143:1654-1661. 被引量:1
  • 10HU Zijun,HOTTINGER K J.Mechanisms of carbon depusifion-a kinetic approach[J].Carbon,2002,40:624-628. 被引量:1

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