摘要
本文采用各向异性腐蚀和干－湿－干氧化锐化工艺，在ｎ型，（１００）晶向、电阻率为３～５Ωｃｍ、３英寸硅片上均匀制备了三种结构硅尖阵列场致发射二极管。锥尖密度达１５０００个／ｍｍ￣２，硅尖曲率半径小于３０ｎｍ；在３５Ｖ收集极电压下，单尖发出电流达０．１４μＡ，其Ⅰ—Ⅴ曲线与Ｆ—Ｎ公式类似。
Three types of diodes of silicon field emission arrays have been succssfuly fabricated on the Si (100)substrate(n type.ρ=3～5Ω·cm)The density of tips is up 15000tips/mm￣2,and the radii of tips are less than 30nm,At 35V on the anode ,Currents averaging to o.14μA/tip have been measured,The Characteristion of I-V curves are simillar to the F-Nformula.
出处
《电子器件》
CAS
1994年第3期55-60,共6页
Chinese Journal of Electron Devices
关键词
各向异性腐蚀
场致发射
二极管
氧化锐化
Anistropic etching,field -emission,diode,oxidation sharpening
