摘要
我们采用液相外延的方法，在ｎ－ＧａＡｓ衬底上生长分别限制单量子阶作为激光器的有源区．国内首次采用银膜作为垂直短腔面发射激光器的谐振腔的反射镜和欧姆接触电极．分别制作了底部和顶部出光的两种类型管子，在室温脉冲工作状态下，均已观察到激射．顶部出光管子阈值电流为４．５Ａ；底部出光管子阈值电流为３．８Ａ．激射波长为８７２．８ｎｍ，纵模间隔为１．９ｕｍ．同时还研究了不同银膜厚度在ＧａＡｓ界面上的反射率．
Abstract Vertical cavity sarface-emitting lasers wafer with separate confinement single quantum well structures was grown by liquicl-phase epitaxy. Silver films are employed as both mirrors and electrodes for Vcsels. Pulsed threshold currents at room temperature are 4.5A and 3.8A, respectively, corresponding to the top and the bottom light windows. The spacing of longitudinol modes is 1.9nm. The lasingwavelength is at 872.8nm.
基金
"863"高技术基金
