摘要
利用直流辉光放电分解碳氢气体来淀积a-C:H(氢化非晶碳)膜,通过测量Al/a-C:H/Si MIS结构的高频C-V曲线讨论了a-C:H/Si界面的电子特性.结果表明a-C:H/Si膜有可能用作半导体器件的表面钝化膜。
The a-C:H films are deposited by d.c. glow discharge decomposition of hydrocarbon gases. Through measurem(?)ats of the high frequency C-V characteristics of Al/a-C:H/Si MIS structure, the electronic properties of a-C:H/Si interface are discussed. The results indicated that the a-C:H films probably can be used as passivation films of semiconductor devices.
出处
《微电子学与计算机》
CSCD
北大核心
1993年第11期47-48,F003,共3页
Microelectronics & Computer
关键词
硅
氢化非晶碳膜
界面
特性
a-C: H
High frequency C-V characteristie
Effective density of surface states
