摘要
用“S”枪磁控反应溅射制备TiN、ZrN和三元化合物(Ti、Zr)N薄膜。这些薄膜的电阻率在40～190μΩ·cm范围。它们与n^+型硅的接触电阻在10^(-3)～10^(-6)Ω·cm^2量级;与P型硅的接触电阻为10^(-3)Ω·cm^2量级。与n型硅形成的肖特基势垒高度为0.39V。TEM分析显示三种氮化物薄膜均为多晶结构。RBS、SAM和XRD的分析都表明TiN和ZrN薄膜作为防止铝/硅互扩散阻挡层所能承受的最高温度是600℃,(Ti、Zr)N为550℃。
TiN, ZrN and (Ti,Zr)N thin films have been made by reactive sputtering using 'S' gun. Resistivity of the as deposited films is in the range of 40～190μΩ·cm. The contact resistances between the nitride and n^+-type and P- type silicons are of the orders 10^(-5)～10^(-6)Ω·cm^2 and 10^(-3)Ω·cm^2. respectively. The Schottky barrier height between the nitride and n - type silicon is about 0.39eV. TEM analysis shows that the nitride films are polycrystalline. Results of RBS,SAM and XRD show that TiN and ZrN films can stand 600℃ annealing as diffusion barrier between Al and Si, while (Ti,Zr)N film can only do 550℃. The annealing behavior of these nitride films is discussed in terms of grain boundary diffusion.
出处
《真空科学与技术》
CSCD
1993年第3期195-203,共9页
Vacuum Science and Technology
基金
国家自然科学基金(No.5860345)
关键词
阻挡层
氮化物
过渡元素
薄膜
Diffusion barrier, Nitride, Buffer layer
