摘要
文章采用三维时域有限差分法对千兆赫兹横电磁波室的馈电接头进行模拟,计算了高频输入时接头内的场分布以及宽频带内端口电压驻波比。由场分布讨论了接头高压输入时所能承受的击穿电压以及提高接头击穿电压的方法;对计算和实测的驻波比特性进行比较,讨论了接头部分反射与小室整体反射的关系。
A three dimensional finite-difference time-domain (FDTD) representation of one GTEM adapter is described. Field contour and voltage standing wave ratio (VSWR) are shown as the results calculated. According to the field behavior, the breakdown strength is discussed. The calculated VSWR of the adapter is compared with the measured one of the GTEM cell.
