摘要
等离子体离子注入(PII)是一种用于材料表面改性的新型离子注入技术。PII分为两类,用于金属表面改性时称为等离子体源离子注入技术(PSII),用于半导体材料表面改性时称为等离子体浸没离子注入(PIII)。本文介绍一种新的PII技术,称为全方位离子注入(All Orientation Ion Implantation),采用横磁瓶电子迴旋共振等离子体源,样品上的负高压可以是直流、交流或脉冲方式,本装置可以工作在离子注入和动态离子束混合两种模式。
Plasma ion implantation(PII)is a new ion implantation technique for modifying the surface of materials. PII is classified into two categories-plasma source ion implantation(PSII)for modifying the surface of metallurgical materials and plasma immersion ion implantation (PHI) for modifying the surface of semiconductive materials.
This article presents a new PII:A11 Orientation Ion Implantation (AOII). Transverse magnetic bottle electron cyclotron resonance (TMB-ECR) plasma source is applied for PII.The high negative potential of samples could be DC, AC or pulse type. The system is operated in two modles-ion implantation and dynamic ion beam mixing.
出处
《微细加工技术》
EI
1993年第3期17-22,共6页
Microfabrication Technology
关键词
离子注入
电子迦旋共振
半导体集成电路
ion implantation
plasma ion implantation
electron cyclotron resonance
