摘要
采用金属有机分解法(MOD)在P型Si(111)衬底上制备了Pb0.85Sm0.1TiO3(PST)薄膜。用X-射线衍射技术研究了退火温度对薄膜的结构和结晶性的影响。同时还研究了薄膜的介电、铁电和绝缘性能。结果发现在600°C下退火1h的PST薄膜呈钙钛矿结构;在0～16V范围内,薄膜的漏电流小于1.17×10-7A;在±10V的偏压范围内,电容-电压(C-V)记忆窗口宽度为4.5V;在室温10kHz下,其介电常数为37.25,介电损耗为0.042。
Pb_(0.85)Sm_(0.1)TiO_3(PST) thin films have been grown on P-Si (111) substrate by a metalorganic decomposition (MOD) method. Effects of annealing temperature on the structural characteristic and crystallization of the films were examined by X-ray diffraction (XRD). The dielectric and ferroelectric properties and insulation characteristic were also studied. The results show that the films annealed at 600 °C for 1 h present perovskite phase; the leakage current is below 1.17×10^(-7) A at an applied voltage range of 0～16 V; the memory window in C-V curve is 4.5 V at the applied voltage range of ±10 V; The dielectric constant and loss are 37.25, 0.042 respectively at room temperature and 100 kHz.
出处
《压电与声光》
CSCD
北大核心
2005年第1期59-61,64,共4页
Piezoelectrics & Acoustooptics
