摘要
本文介绍了硅槽应用,即硅槽隔离和硅槽电容,对器件性能的改善。并介绍了硅槽隔离和硅槽电容的形成步骤及硅槽刻蚀剖面的形貌控制,CBrF_3刻蚀硅槽侧壁保护层的形成等等。
The improvements of device performances by silicon trench isolation and silicon trench capacitors are introduced in the paper. The formation process for silicon trench isolation and silicon trench capacitors, and the profile control of the silicon trench etching are described, as well as the formation of the protective layer on the side wall of the silicon trench by etching in CBrF3.
出处
《微电子学》
CAS
CSCD
1993年第2期39-43,共5页
Microelectronics
关键词
硅槽
刻蚀剖面
刻蚀工艺
集成电路
Silicon trench, Etching profile, Etching process
