摘要
采用直管式反应感应耦合等离子体增强化学气相沉积法(ICPECVD)制备氮化硅薄膜,并用傅立叶变换红外光谱仪测试了氮化硅薄膜的红外光谱,结果表明氮化硅薄膜中不仅存在Si-N键,而且由于杂质氢的存在而含有Si-H键和N-H键.用朗缪尔单探针测试了直管式反应室中的等离子体参数,得到离子密度Ni在反应室内轴向以及径向位置的变化规律,弄清了离子密度Ni分布比较均匀的区域,分析了离子密度Ni分布的均匀性对等离子体干法刻蚀和薄膜制备的影响和意义.
Silicon nitride thin film was prepared by Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPECVD) in the tubular chamber. The infrared absorption spectrums of silicon nitride thin film showed that there is not only Si-N bond, but also Si-H and N-H bonds because of the existence of hydrogen as impurity. The ion density distribution Ni in the tubular reaction chamber was diagnosed by a Langmuir single probe. The distribution rules of ion density in the axial and radial direction in the reaction chamber were obtained. The regions with uniform ion density distribution were also obtained, which is very useful to the process of dry etching and the deposition of thin film.
出处
《华南师范大学学报（自然科学版）》
CAS
2004年第4期65-69,共5页
Journal of South China Normal University(Natural Science Edition)
基金
广东省自然科学基金资助项目(000675)
广东省重点攻关资助项目(ZKM01401G)
广东省高教厅基金资助项目(0123)
