摘要
用溶胶-凝胶法制备了 Ga_2O_3-NiO 复合金属氧化物气敏材料，对其相组成、电导和气敏性能作了研究．结果表明：镍镓物质的量比 n(Ni^(2+)∶n(Ga^(3+)=0.7～0.9∶2、800℃下热处理4h，得到纯相尖晶石型复合金属氧化物 NiGa_2O_4．缺陷 Ga_(Ni)~x 的反应(Ga_(Ni)~x→Ga_(Ni)~'+h~·)，使 NiGa_2O_4呈 p 型半导体．n(Ni^(2+)∶n(Ga^(3+)=1∶2凝胶粉在800℃下热处理4h，所得纳米微粉制作的元件在313℃工作温度下对 C_2H_5OH 有较高灵敏度和良好的选择性。
Ga2O3-NiO Complex Oxide gas-sensing materials were prepared by sol-gel method. Effects of heat-treatment temperature and different n(Ni2+ : n (Ga3+) ratios on the phase constituents were characterized by XRD, IR and ICP, respectively. The conductance-temperature and gas-sensing properties of Ga2O3-NiO were investigated. The results demonstrate that pure phase NiGa2O4 can be obtained when the ratio of Ni2+ to Ga3+ ( n(Ni2+): n(Ga3+)) is 0.7similar to 0. 9:2 and heat-treatment is carried out at 800 degreesC for 4 hours. Because of the reaction GaNix-->GaNi' + h(.), NiGa2O4 is a p-type semiconductor and exhibits high sensitivity and good selectivity to C2H5OH.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
2005年第1期10-15,共6页
Acta Physico-Chimica Sinica
基金
安徽省教育厅自然科学基金(2004kj299)~~
