摘要
研究了一种用于微机械加速度计的CMOS时钟产生电路。该电路可以方便地实现片内 时钟的精确产生,集成了具有高电源抑制比的基准电压源,振荡频率可根据需要调节。实际电路采 用1.2 μm双层多晶硅、双层金属N阱CMOS工艺实现。在5 V电源电压、800 kHz振荡频率下,该 电路功耗约为1.5 mW。
A CMOS clock generation circuit for micro-accelerometer is described, which realizes an accurate on-chip generation of clock signals with tunable frequency range. A bandgap reference is integrated in the circuit. The device is fabricated with a 1. 2 μm double-polysilicon, double-metal N-well CMOS technology. When operating from a 5-V supply voltage, the circuit can achieve a central frequency of 800 kHz for 1. 5 mW power dissipation.
出处
《微电子学》
CAS
CSCD
北大核心
2005年第1期85-88,共4页
Microelectronics
关键词
时钟产生电路
频率可调
振荡器
Clock generation circuit
Tunable frequency range
Oscillator
