摘要
根据BaF2晶体闪烁光快、慢成分波段的不同,设计并制备了用于抑制该晶体闪烁光慢成分的 Al2O3/MgF2/Al/MgF2…光子带隙膜系。实验结果显示:加载光子带隙膜系的BaF2晶体,其闪烁光快/慢成分 比提高80倍以上;经剂量为1×105Gy的60Coγ射线辐照后,其透射光谱、发射光谱和发光衰减时间谱没有明 显的变化,这表明由光子带隙膜系与BaF2晶体所构成的快闪烁器件不仅可有效避免慢成分的干扰,而且还具 有很强的抗γ辐射性能。
On the basis of the different emission bands between the fast and slow components in BaF_2 crystal, the photonic band multilayer filter with 3.5 periods of Al_2O_3/MgF_2/Al/MgF_2... was designed and developed in order to suppress the slow component of the scintillation light in BaF_2. It is shown that the filter can increase more than 80 times of the ratio of the intensities of the fast emission to the slow one, while the transmission, emission and decay time spectra of BaF_2 crystal modified by the filter are not changed apparently after ^(60)Co γ-ray irradiation under the dose of 10~5 Gy. The results indicate that BaF_2 crystal modified by the filter can not only avoid the interference of the slow component effectively, but also keep the good radiation resistance.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2005年第1期42-46,共5页
High Power Laser and Particle Beams
基金
国家863计划项目资助课题
教育部高等学校优秀青年教师教学科研奖励计划资助课题
高等学校博士学科点科研基金
上海市教育委员会曙光计划(2SG19)
青年教师项目资助课题(01QN18)
关键词
BAF2晶体
光子带隙膜系
慢成分抑制
辐照损伤
BaF_2 crystal
Photonic band multilayer filter
Slow component suppression
Radiation damage
