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两种InGaAs/InP PIN光探测器比较研究 被引量:2

Comparative study of two kinds of InGaAs/InP PIN photodetectors
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摘要 异质结 PIN 光探测器可分为单异质结光探测器(SHPD)和双异质结光探测器(DHPD),二者在量子效率、频率响应和暗电流方面存在差异。当 SHPD 光敏面半径为 10μm 且 P 区厚度与电子扩散长度之比小于 0.2 时,其量子效率减小的幅度小于 0.32%,带宽增加约 0~4%;对于由体效应决定的暗电流,SHPD 略优。由此得到当光敏面积较小和 P 区厚度较薄时,SHPD 与 DHPD 性能相当的结论,为高性能宽带光纤网高速光探测器的设计提供了依据。 Heterojunction PIN photodetectors can be classified as single heterojunction photodetector (SHPD) and double heterojunction photodetector (DHPD), there are some differences in quantum efficiency, frequency response and dark current between them. When photosensitive surface radius of SHPD is 10μm and the ratio of thickness of P layer to electron diffusion length is less than 0.2, the decrease of quantum efficiency is less than 0.32% and bandwidth increases for about 0~4%. For dark current determined by bulk effect, SHPD is slightly better. From this we can achieve a conclusion that when photosensitive surface is less and the thickness of P layer is thinner, SHPD performance is equivalent to that of DHPD, thus providing a basis for designing high-performance photodetectors of broad band fiber optic network.
出处 《光电工程》 CAS CSCD 北大核心 2004年第12期30-33,共4页 Opto-Electronic Engineering
基金 国家自然科学基金(60277008) 教育部重点科技项目(03147) 四川省科技厅资助(01GGP1904) 电科院资助
关键词 PIN光探测器 量子效率 频率响应 暗电流 PIN photodetector Quantum efficiency Frequency response Dark current
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