摘要
为了提高锰铜传感器的测压上限,须用薄膜工艺制备无机绝缘三氧化二铝薄膜来作为传感器的绝缘封装层。采用电子束蒸发法,对影响三氧化二铝薄膜的相关工艺如:蒸发原料的纯度、成膜次数进行了研究。最终得出:由99.99%的三氧化二铝原料制备出的薄膜致密性好、缺陷少,其绝缘电阻率和损耗分别可达1012O·cm和103量级;而采用多次间隙蒸发可明显改善薄膜的附着性和致密性。
Aimed at extending the measurement range of manganin gauges, the manganin sensing elements were encapsulated in alumina thin films by e-beam evaporation. The effects of the purity of alumina source and deposition times on the properties of the films were investigated. Denser and less defects films can be prepared using a 99.99% alumina source. The resistivity and dielectric loss can be reached to 1012 Ocm and 103, respectively. The adhesion and density of the films can also be improved by sequential evaporation.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2004年第12期25-27,共3页
Electronic Components And Materials
基金
电子预研基金资助项目(AW030412)
