摘要
采用sol-gel法在Pt/Ti/SiO2/Si衬底上制备了Ba(Zr0.3Ti0.7)O3(BZT)薄膜。对其先体溶液进行了差热与热失重曲线(DSC-TG)分析,并以此来确定了薄膜的热处理工艺。X射线衍射分析表明,550℃时开始有钙钛矿相生成,到600℃时,已经完全形成了钙钛矿结构。采用er、tgd的频率和偏压特性曲线研究了不同工艺条件下薄膜的介电性能。经过700℃热处理,薄膜在10 kHz频率,300 K温度测试条件下,相对介电常数为385,介质损耗为0.022;200103 V/cm电场条件下薄膜介电可调率为25.6%。
Ba(Zr0.3Ti0.7)O3(BZT) thin films were prepared by sol-gel processing on Pt/Ti/SiO2/Si substrate. The heat-treatment technology was fixed according to the DSC-TG curves. XRD patterns show that the perovskite phase was obtained on the annealing temperature of 600℃. The dielectric properties of thin films with different annealing temperature were investigated by the C-V and C-f. The dielectric constant and loss tanget is 385 and 0.022 respectively at 10kHz and 300K.A tunability of 25.6% has been achieved under electric field of 200103 V/cm.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2004年第12期10-12,16,共4页
Electronic Components And Materials
基金
973计划信息功能陶瓷的若干基础问题研究子课题:铁电陶瓷可逆介电非线性响应与可调机理研究(项目编号:2002CB613304)
上海市重点学科资助项目
