摘要
采用高频放电的方法对ITO电极表面进行了处理,并用接触势差法测量了处理前后的ITO表面功函数.用单载流子器件模拟表明ITO经高频放电处理后降低了器件界面的空穴注入势垒.此外,处理后的ITO的双层发光器件的驱动电压下降,发光亮度及效率得到明显提高.
Surface of indium tin oxide (ITO) is treated using high frequency discharge, and the work function is measured with the method of contact barrier difference. Analogy of hole injection barrier indicates that the interface barrier of ITO is lowered after being treated with the high frequency discharge method using hole-only devices. In addition, improved performances, i.e., lower turn-on vol-(tages) and higher luminance and efficiency of bilayer devices with treated ITO, are found in devices that are ITO-treated.
出处
《上海大学学报（自然科学版）》
CAS
CSCD
2004年第6期551-554,共4页
Journal of Shanghai University:Natural Science Edition
基金
国家"86 3"高科技计划资助项目 (2 0 0 1AA3 1 3 0 70 )
国家自然科学基金资助项目 (6 0 0 770 2 0
90 2 0 1 0 3 4)
关键词
高频放电
功函数
有机电致发光
空穴注入势垒
high frequency discharge
work function
oganic LEDs
hole injection barrier
