摘要
A novel ZnS:TmF 3 TFEL device with the structure of ITO/SiO 2/ ZnS:TmF 3/SiO 2/ZnS:TmF 3/SiO 2/Al was prepared by e beam evaporation method. The EL emission spectra show that the brightness of the novel structure devices greatly increases compared with that of devices with traditional double insulator structure, and the ratio of blue emission to red emission of the novel structure device is also improved. The improvement of the EL characteristics of this kind TFEL device is attributed to both of the electron acceleration and the ZnS/SiO 2 interface.
A novel ZnS:TmF 3 TFEL device with the structure of ITO/SiO 2/ ZnS:TmF 3/SiO 2/ZnS:TmF 3/SiO 2/Al was prepared by e beam evaporation method. The EL emission spectra show that the brightness of the novel structure devices greatly increases compared with that of devices with traditional double insulator structure, and the ratio of blue emission to red emission of the novel structure device is also improved. The improvement of the EL characteristics of this kind TFEL device is attributed to both of the electron acceleration and the ZnS/SiO 2 interface.
基金
ProjectSupportedbytheNationalNaturalScienceFoundationofChina ( 5 9982 0 0 1 )andtheNationalNaturalScienceFounda tionofBeijing( 40 1 2 0 1 0 )
