摘要
SiC whiskers with "rosary bead" morphology were synthesized using suitable silicon source and carbon source through solid reaction at the temperature above 1537 K. The diameter and length of the SiC whiskers were about 0.1-1.0 μm and 20-100 μm, respectively. The largest diameter of their enlarged ends of the whiskers was about 0.2-1.0μm, and it gradually and smoothly decreased to the size of the plain part of the whiskers. The results of X-ray diffraction analysis show that the crystalline structure of the obtained SiC whiskers is β-SiC. It is considered that the SiC whiskers grow via a vapor-solid mechanism.
SiC whiskers with 'rosary bead' morphology were synthesized using suitable silicon source and carbon source through solid reaction at the temperature above 1537 K. The diameter and length of the SiC whiskers were about 0.1-1.0 μm and 20-100 μm, respectively. The largest diameter of their enlarged ends of the whiskers was about 0.2-1.0μm, and it gradually and smoothly decreased to the size of the plain part of the whiskers. The results of X-ray diffraction analysis show that the crystalline structure of the obtained SiC whiskers is β-SiC. It is considered that the SiC whiskers grow via a vapor-solid mechanism.
