摘要
采用离子束溅射技术制备了 Co20Cu80磁性颗粒膜样品,并对它的电阻进行了研究:在低磁场时,dV/dI 谱线变化缓慢;当 H>HS 时,在通过点接触注入高密度电流为 108A/cm2 时 dV/dI 谱线出现一个峰值。认为该电阻变化是由于在 Co20Cu80磁性颗粒膜中零波数自旋波的激发,并用试探性的理论给予了解释。同时还研究了 Co20Cu80磁性颗粒膜的巨磁电阻以及在高注入电流和强磁场下的静态电阻。
Using ion-beam sputtering technique, a series of Co20Cu80 granular film samples have been fabricated. We have observed variations in the resistance of the samples: in the lower magnetic fields the variations of dV/dI curve is slow. When H>HS , a high current density (108A/cm2) is injected into the samples through a means of point contact, the dV/dI curve can appear a peak value . It’s proposed that the observed resistance changes are due to excitations of zero-wane-number spin wanes in the Co20Cu80 granular film. and it’s explained by a explorative theory . At the same time, the Giant Magnetoresistance (GRM) effect and static contact resistance (Rc) of the sample were investigated under the high inject current and the externally applied magnetic field
出处
《红外技术》
CSCD
北大核心
2004年第6期48-50,共3页
Infrared Technology
基金
涪陵师范学院重点学科建设基金资助项目(2003-148)
