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电子束蒸发沉积工艺条件对ZrO_2薄膜性能的影响 被引量:7

Influence of Process Conditions on Properties of ZrO_2 Coatings Prepared by Electron Beam Evaporation
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摘要 在电子束蒸发沉积制备ZrO2薄膜的过程中,采用石英晶体振荡法监控膜厚和沉积速率。用NKD7000分光光度计测量了ZrO2薄膜的折射率和膜厚,用原子力显微镜分别观测了不同工作气压和沉积速率下薄膜的表面形貌、均方根粗糙度。结果表明,随着工作气压的升高,膜层的结构变疏松,薄膜的折射率和均方根粗糙度都随之减小。随着沉积速率的增大,膜层的结构变致密,薄膜的折射率和均方根粗糙度都随之增大。并且从工具因子(TF)的角度得到了证实。实际镀膜过程中应该根据激光薄膜的应用需要选用合适的工艺条件,在允许的均方根粗糙度范围内提高膜层的结构致密性和折射率。 ZrO 2 coatings were prepared by electron beam evaporation,while coating thickness and deposition rate were monitored and demonstrated by quartz crystal oscillation. The refractive index and thickness of ZrO 2 coatings were measured by NKD7000 spectrophotometer. The surface morphology and root mean square (RMS) roughness had been characterized by atomic force microscopy (AFM). It was found that the refractive index and RMS roughness were decreasing as the working pressure was increasing; the refractive index and RMS roughness were also increasing as a result of increasing deposition rate. Which were agreed with the results of tooling factor. Proper process conditions had to be used in order to get optical coatings with better structures under proper RMS roughness.
出处 《中国激光》 EI CAS CSCD 北大核心 2004年第11期1356-1360,共5页 Chinese Journal of Lasers
关键词 薄膜 ZRO2薄膜 工作气压 沉积速率 石英晶体振荡法 thin films ZrO_2 coatings working pressure deposition rate quartz crystal oscillation
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  • 1Wu Guoying,IEEE Proc 11th VMIC,1994年,221页 被引量:1
  • 2Huang J,Mater Res Soc Proc,1990年,182卷,201页 被引量:1
  • 3LingHao,ShiWei,SunJianetal.Preparationofaluminumnitridefilmsusingpulsedlaserdeposition[].ChineseJLasers(中国激光).2001 被引量:1
  • 4C .C .Liao,AlbertChin,C .Tsai.ElectricalcharacterizationofAl2O3 onSifromthermallyoxidizedAlAsandAl[].JCrystalGrowth.1999 被引量:1
  • 5Zhang Ninglin,Wan Qing,Song Zhitang et al.Highquality ZrO2 thin films deposited on silicon by high vacuum electron beam evaporation[].Chinese Physics Letter.2002 被引量:1
  • 6T. Ngai,W. J. Qi,R. Sharma et al.Electrical properties of ZrO2 gate dielectric on SiGe[].Applied Physics Letters.2000 被引量:1
  • 7Wen-Jie Qi,Renee Nieh,Byoung Hun Lee et al.Ultrathin zirconium silicate thin film with good thermal stability for alternative gate dielectric application[].Applied Physics Letters.2000 被引量:1
  • 8H. Asaoka,Y. Katano,K. Noda.Epitaxial growth of zircoonium dioxide films on sapphire substrates[].Applied Surface Science.1997 被引量:1
  • 9T. S. Jeon,J. M. White,D. L. Kwoong.Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100)[].Applied Physics Letters.2001 被引量:1
  • 10Weimin Huang,Jianlin Shi.Properties of zirconia films dispersed with PbS nanoparticles[].Journal of Materials Research.2000 被引量:1

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