摘要
近年来,采用各种不同沟槽栅结构使低压MOSFET功率开关的性能迅速提高。本文分上、下两篇综述了这方面的新发展。上篇重点阐述了降低漏源通态电阻RDS(on)方面的技术发展;下篇重点阐述了降低优值FoM方面的技术发展。
Recently, the performance of low-voltage power switching MOSFET using trench technology has improved rapidly. This article discusses the new developments of this aspect. The part I focuses on the technology developments reducing on-resistance. The part II will treat with decreasing Figure of Merit.
出处
《电力电子》
2004年第4期4-9,共6页
Power Electronics
