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N_2、Ar气体对磁控溅射沉积掩膜铬膜性能的影响

Effects of N_2 and Ar gases on performance of Cr thin film of photomask depositedby magnetron sputtering
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摘要 研究了真空直流磁控溅射下分别充 N2 、Ar气体对铬版成膜性能的影响 ,对两种膜层光密度、厚度、表面微结构形貌以及成分进行测试分析 ,膜层成分分析表明这两种气体仅充当了工作气体 ;综合研究结果表明 :在相同条件时 ,经两种气体作用的膜层其光密度出现很大差异的主要原因是由于气体的不同质量引起膜层沉积速率的不同 。 Cr thin flims of photomask were prepared by way of magnetron sputtering process in N_2 and Ar atmosphere separately, and how the two different gases affect the performance of the Cr mask were investigated. The testing results of optical density, thickness, surface microstructure morphology and components showed that both gases are nothing but playing the role as working gas. Based on a comprehensive analysis, a conclusion may be drawn that under otherwise equal conditions the cause of the greatly different optical densities of the films deposited in N_2 and Ar atmospheres is mainly the different masses of the two gases, which will result in the difference between the film deposition rates in N_2 and in Ar atmospheres. It is of practical importance to the Cr thin film preparation of which the optical density is preset with smooth edges required for all etched lines.
出处 《真空》 CAS 北大核心 2004年第5期15-18,共4页 Vacuum
关键词 磁控溅射 光密度 铬版 magnetron sputtering optical density Cr photomask
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