摘要
利用负偏压增强热丝化学气相沉积在不同的负偏压和压强下 ,在沉积有不同厚度NiFe膜的Si衬底上制备了碳纳米管 ,并用扫描电子显微镜研究了它们的生长。发现在无辉光放电的情况下 ,碳纳米管弯曲生长 ,而在辉光放电时 ,碳纳米管准直生长 ,表明辉光放电对碳纳米管的准直生长起到了重要的作用。由于辉光放电的产生 ,在衬底表面附近形成很强的电场。相对无辉光放电时的电场 ,场强提高了两个数量级。本工作详细地研究了辉光放电对碳纳米管的准直生长作用。
Carbon nanotubes were synthesized on silicon substrates coated with NiFe films of different thickness by negative bias-enhanced hot filament chemical vapor deposition at different negative bias and pressure, and their growth was investigated by scanning electron microscopy. It was found that the bent and aligned carbon nanotubes are respectively grown without and with glow discharge, indicating that glow discharge plays an important role for alignment growth of carbon nanotubes. Due to occurrence of glow discharge, a strong electric filed is established near the substrate, where its strength relative to the field without glow discharge can be enhanced two order of the magnitude. In the work, the effect of glow discharge on alignment growth of carbon nanotubes was studied in detail.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2004年第4期629-633,共5页
Journal of Synthetic Crystals
