摘要
利用Bandsolve软件分别优化计算得到GaAs、Si、Ge三种材料的二维介质圆柱型光子晶体完全禁带与晶格结构、填充比、介电常数比三个主要影响因素之间的关系。研究发现,当填充比(r/a)介于0.1～0.5时,对于六边形晶格,三种材料都不存在完全禁带;四边形晶格,Ge存在较窄的完全禁带,GaAs和Si不存在完全禁带。对于蜂窝形晶格,当填充比介于0.18～0.5时,三种材料均存在较大的完全禁带,而且,介电常数比越大,完全禁带宽度越大。所得结果对二维介质圆柱型光子晶体的制作和进一步应用研究奠定了理论依据。
The relation between complete bandgap and three main influence factors, lattice structure, fill ratio, dielectric constant ratio of 2D dielectric-column photonic crystals with GaAs, Si, Ge, is studied using Band-solve software, respectively. Research demonstrate that the range of fill ratio is 0.1-0.5, and lattice structure is hexagon. 2D dielectric-column photonic crystals of three materials have no complete bandgap. When lattice structure is square, 2D Ge photonic crystal has narrow complete bandgap, and 2D GaAs, Si photonic crystal has no complete bandgap, respectively. When lattice structure is honeycomb, the range of fill ratio is 0.18-0.5, and 2D dielectric-column photonic crystals of three materials have complete bandgap. Furthermore the bigger dielectric constant ratio is, the wider complete band gap can be obtained. The results establish a good theory base for fabrication and further application of 2D dielectric-column photonic crystals.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2004年第7期835-838,共4页
Journal of Optoelectronics·Laser
基金
光电技术研究所领域前沿课题项目
四川省学术和技术带头人培养资金项目
微细加工光学技术国家重点实验室开放基金资助项目
