摘要
报道了对GaAs/Ge太阳电池器件工艺的研究结果。采用细栅厚电极正胶剥离技术制备细栅厚电极 ,栅线宽度小于 15 μm ,厚度在 5 μm以上 ;采用NH4 OH/H2 O2 选择性腐蚀液体系去除GaAs帽子层 ;采用真空蒸发制备TiO2 /SiO2 双层减反射膜 ,电流密度增益可达 2 5 %以上 ;研制出平均效率达到 19% (AM0 ,1s,2 5℃ )以上的GaAs/Ge太阳电池。
The fabrication technology of GaAs/Ge solar cells for space use is researched. The front contacting grids of the solar cells are formed with the fingers width less than 15 μm and the depth above 5 μm, the GaAs cap layers are removed by NH_4OH/H_2O_2 selective etching solution, the current density may improved by above 25% by using evaporating double-layered TiO_2/SiO_2. The GaAs/Ge solar cells with average efficiency of above 19%(AM0, 1 s, 25 ℃) are achieved.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2004年第3期508-510,共3页
Chinese Journal of Rare Metals
