摘要
采用低压金属有机物化学气相沉积 (MOVPE)工艺 ,分别在p型和n型Ge衬底上生长了GaAs电池 ,发现Ge甚至可以扩散到GaAs电池结区 ,导致电池性能严重下降 ,而Ga和As的扩散 ,常常导致异常Ⅳ曲线 ;在GaAs外延层观察到的主要晶体缺陷是反相畴和线位错 ,通过降低生长温度和优化成核条件 ,获得了较好的界面特性 ,在n Ge衬底上获得了效率为 2 0 .2 % (AM0 ,2 5℃ ,2cm× 4cm)的GaAs电池 ,在p Ge衬底上获得了性能较好的Ge电池。
The characteristics of GaAs/Ge interface, which are critical considerations for Ⅲ-Ⅴ solar cells on Ge were stadied. The GaAs cells were grown on p-type and n-type Ge substrates by metalorganic vapor phase epitaxy (MOVPE) at a lower gas pressure. Experimental results were analysed for the impacts of the characteristics of GaAs/Ge interface on the performances of the cells.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2004年第3期505-507,共3页
Chinese Journal of Rare Metals
