摘要
利用循环伏安法和X射线光电子能谱技术(XPS)研究In在碱性溶液中的电极反应,结果表明通过阳极氧化可在In电极表面形成In_2O_3膜.探讨能获得较高光电转换量子效率的In_2O_3膜的电化学制备方法,并利用Mott-Schottky图、光电流谱和电反射光谱的测量测定膜的半导电性质.
The electrode reactions of indium in alkaline solution have been studied by using cyclic voltammetry and XPS technique. The results show that the In2O3 film can be obtained by means of the anodic oxidation. The preparation methods were optimized in order to form an In2O3 film with high quantum efficiencies for the photoelectrochemical oxygen evolution. The semiconducting properties of the In2O3 anodic film and the thermally oxidized In2O3 anodic film were investigated through Mott-Schottky plots, photocurrent response and spectra, and electroreflectance spectra. The anodic film possesses the two kinds of donor and the indirect fundamental optical transition (Eg = 2. 88 eV) which becomes direct (Eg=3. 68 eV) after thermally oxidation of the film.
出处
《高等学校化学学报》
SCIE
EI
CAS
CSCD
北大核心
1993年第7期978-982,共5页
Chemical Journal of Chinese Universities
基金
国家自然科学基金
关键词
铟电极
氧化铟膜
光电化学
Indium electrode, Indium oxide film, Photoelectrochemistry
