摘要
新型调制器采用了大功率IGBT开关组来满足应用于微波增幅用的大功率(峰值达几兆瓦)调制器的需求.与其它固态调制器不同的是,在这个系统中没有把半导体开关进行并联或串联使用,每个半导体开关驱动脉冲变压器线圈的一段.在结构上,在原边采用分匝绕组接法,因为没有脉冲形成电路(PFN),靠调节IGBT开关的触发时间就能调节输出脉冲的宽度,同时在脉冲顶部不会出现因PFN而产生的漂移.与同功率的调制器相比,这种新型调制器的体积仅为传统调制器的10%.
The new modulator represents the application of high-power IGBT switching modules to meeting the requirements of multi-megawatt peak power modulators for microwave amplifier applications. Unlike some other solid-state modulators, no semiconductor switches are placed in series in this system, each switch drives a segment of the pulse transformer core, in a configuration we refer to as a 'fractional-turn primary' arrangement, As no PFN is required the width of the output pulse can be adjusted by simply adjusting the trigger duration of the IGBT switches and no PFN ripple occurs on the pulse-top. The volume of the complete modulator is about 10% of a classical unit of the same power.
出处
《哈尔滨商业大学学报（自然科学版）》
CAS
2004年第4期450-452,共3页
Journal of Harbin University of Commerce：Natural Sciences Edition
基金
黑龙江省自然科学基金[C0208]
黑龙江省教育厅科技项目(10531065).
