摘要
采用 1 0 0 m m厚度 4 0 0 μm、电阻率为 0 .8～ 2 Ω· cm的 p(1 0 0 ) CZ硅片制作硅光单体电源 ,并对 RTP和铝背场烧结工艺进行了研究 .实验发现 :快速热退火工艺对硅片少子寿命产生一定影响 .铝背场烧结和适当的快速热处理促成了硅片界面晶格应力对重金属杂质的吸附作用 ,并减少了载流子的复合中心 ,从而提高了光生载流子的扩散长度 。
The use of the CZ silicon wafer to make silicon photo single cell is described and the craft of rapid thermal processing is studied.All these samples are p type(100) CZ silicon wafers,and the thickness is 400μm with the electric resistance rate of 0 8～2Ω·cm.It is concluded that while Al BSF sintering under suitable heat treatment,the crystal lattice stress absorbs the heavy metal impurities and decreases the compounds of electron cavity,so increases the diffusion of minority carriers and even to improves the carrier lifetime by 78%.
基金
河北省自然科学基金资助项目 (批准号 :5 0 10 19)~~
关键词
RTP
氧沉淀
少子寿命
吸杂
RTP
oxygen precipitation
minority carrier lifetime
gettering
