摘要
太赫兹频段部件的工艺实现是决定器件性能的关键环节。从太赫兹频段部件用50μm超薄石英基片薄膜电路的集成工艺技术难点和可实现性出发,重点介绍了一种灵活快速的解决方案——临时键合与解键合技术。结果表明,临时键合与解键合技术克服了超薄石英基片脆性大、易破碎的弊端,在50μm及以下厚度超薄石英基片薄膜电路集成中具有很好的应用前景。
Realization of integration technology is the key link of device performance in terahertz wave regime. The difficulty and realizability for integration technology of thin film circuits on 50μm quartz substrate are investigated. As a rapid and flexible detail solution,temporary bonding and de-bonding technology is addressed. It is concluded that temporary bonding and de-bonding technology overcomes the disadvantages of fragility of ultrathin quartz substrate,and has an extensive application prospect in the field of thin film circuit integration on 50μm and even thinner quartz substrate.
出处
《微波学报》
CSCD
北大核心
2015年第3期93-96,共4页
Journal of Microwaves
关键词
太赫兹
超薄石英基片
临时键合
解键合
薄膜电路
THz,ultrathin quartz substrate,temporary bonding,de-bonding,thin film circuit
