摘要
从声子散射机制出发,介绍了Si C热导率的温度特性和微观导热机理。综述了Si C单晶热导率的2种主要计算方法。Boltzmann-弛豫时间近似(RTA)适用于各个温度段的热导率计算,而分子动力学方法更适用于高温热导率计算。分子动力学方法相比于Boltzmann-RTA方法的优点在于它可以考虑所有高次项的非谐作用。介绍了3种Si C陶瓷热导率近似计算模型,包括界面热阻模型、Debye-Callaway模型及多相系统热导率模型。下一步研究的主要方向仍然是优化计算模型及减少拟合参数。
The temperature-dependent behavior of the thermal conductivity of Si C and the relevant thermal conductive mechanism were represented based on the photon scattering mechanism. Two methods for the calculation of thermal conductivity of Si C single crystals, i.e., Boltzmann-relaxation time approximation(RTA) method and molecular dynamic(MD) method, were reviewed. The Boltzmann-RTA method can be applied at different temperatures. The MD method can be utilized at high temperatures. However, the MD method has an advantage that it treats an anharmonicity in different orders, compared to the Boltzmann-RTA method. In addition, three calculation models for multiphase system, i.e., interface thermal resistance model, the Debye-Callaway model and calculation model, were also represented. The prospective future work focuses on the optimization of calculation and the reduction of some adjustable parameters.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2015年第3期268-275,共8页
Journal of The Chinese Ceramic Society
基金
国家自然科学基金(51072210
51302288)资助项目
关键词
碳化硅
热导率
计算
silicon carbide
thermal conductivity
calculation
