摘要
介绍了生长电阻率1×104～2×104Ω.cm的p型高阻真空区熔Si单晶时,所生长单晶少子寿命的变化特点。经过反复实验发现,真空环境下生长的高阻单晶,在转肩后不久,晶棒断面中心处,寿命均出现了明显的突变,并且有30～40mm的低寿命区,之后随着生长的继续,寿命又会有明显的升高。此种现象在相同条件、相同原料生长的气氛单晶中就没有出现。利用金相电子显微镜对所发现的低寿命区进行了缺陷分析,结果在低寿命区的断面处均未发现漩涡、位错等对寿命影响较为严重的缺陷。
The grown method of FZ-Si single crystal in vacuum with higher resistivity、p-type and the diversification characteristic the minority carrier lifetime of the specimens grown by this method were described.At the center of the transect,the minority carrier lifetime of the specimens decline sharply all of a sudden at the beginning of the diameters keep invariableness,and the lower minority carrier lifetime will continue in the following 30-40 mm,and the minority carrier lifetime will be increased along with the growing of the crystal.On the contrast,the single crystal grown in argon condition with the same circumstance and the poly crystals are made by the same corporations have no such phenomenon.The defects were also investigated by electron microscope on the area with lower minority carrier lifetime and no dislocation and swirl defect was fond in the specimens.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第S1期284-286,共3页
Semiconductor Technology
关键词
真空
区熔
少子寿命
漩涡
位错
vacuum
FZ
minority carrier lifetime
swirl
dislocation
