摘要
悬浮区熔法是生长Si单晶的重要方法之一,高频线圈产生的电磁场能量分布直接影响着Si单晶的生长情况,通过有限元的方法可以对区熔Si单晶生长进行数值模拟。考虑了二维轴对称情况下由高频线圈产生的电磁场对熔区产生的影响,分析了区熔Si单晶生长系统的组成,通过电磁场基本方程的推导建立了电磁场模型。利用软件进行了计算机建模,对模型的网格划分充分考虑了计算的关键部位,通过边界条件和载荷的选取完善了电磁场方程,最终通过计算机仿真计算得出电磁场的模拟结果。
Floating zone(FZ)growth is one of the most important methods in Si crystal.Energy distributing producing in high frequency circuit influences the growth of Si crystal.The finite element method is taken to the numerical simulation of silicon crystal growth.The high frequency electromagnetic to coil in two-dimensional axial symmetry was considered.By analyzing the system of FZ Si growth,the electromagnetic model by deduction of the basic electromagnetic field equation was built up.Through the numeration emulating,the key part of system is gridding densely.Finally,the emulating result was got by appending the boundary condition and the load.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第S1期256-258,共3页
Semiconductor Technology
关键词
区熔
SI
数值模拟
电磁场
floating zone
Si
numerical simulation
electromagnetic field
