摘要
保温材料是影响高温气相法生长AlN晶体的主要因素之一。石墨由于其优良的耐高温性和低的热导率,成为目前制备AlN最常用的保温材料,但是存在易引入C杂质、减少坩埚寿命等缺点。采用不添加任何添加剂AlN粉体制作了高温气相法生长AlN晶体的保温材料,并与石墨保温材料进行对比研究发现,AlN保温材料具有耐高温、对W坩埚材料没有损伤、使用寿命长、不易在晶体中引入杂质等优点,是一种优良的高温保温材料。但是,与石墨保温材料相比,AlN也存在热导率相对较高、在高温过程中AlN粉体会出现少量升华污染炉腔等缺点,在使用中要采取一定的对策。
The choice of thermal insulation materials is one of the crucial factors for growing AlN crystals by physical vapor transport(PVT).Graphite is the most popular insulation material for growing AlN crystals because of its low heat conductivity coefficient and good heat insulation.But it could bring carbon impurity and reduce lifetime of the tungsten crucible.AlN powder with no additive is used as a thermal insulation material for the physical vapor transport growth of AlN crystals.Comparing with the graphite insulator,the AlN thermal insulator has some advantages,such as,high working temperature,no damaging to the tungsten crucible,long lifetime,and low impurity pollution to the AlN crystals.But the AlN thermal insulator has higher heat conductivity and may bring slight pollution to the furnace due to its sublimation effect at high temperature,which should be overcome in the experiments.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第S1期179-182,共4页
Semiconductor Technology
基金
国家自然科学基金(60376003
60576005)
深圳市科技计划费用项目(200517)
关键词
氮化铝
石墨
晶体
保温
材料
AlN
graphite
crystal
heat-insulation
material
