摘要
研究了GaN基外延材料对Al GaN/GaN HEMT电流崩塌效应影响,基于背对背肖特基I-V特性的对称性与Al GaN/GaN HEMT电流崩塌效应的对应关系,提出了一种检验GaN基外延材料的简便方法。实验观察到,背对背肖特基结I-V特性对称性好的外延材料,所对应的Al-GaN/GaN HEMT器件电流崩塌程度更小,反之亦然。缺陷俘获电子是引起背对背肖特基结I-V特性不对称的根本原因,这些缺陷也是产生Al GaN/GaN HEMT电流崩塌效应的重要原因,因此利用背对背肖特基I-V特性的对称性是定性地评价GaN基外延材料质量优劣的一种有效方法。
The effect of GaN-based material on AlGaN/GaN HEMT current collapse was investigated.Based on the relationship of symmetry of I-V characteristic of back-to-back Schottky contact junction and AlGaN/GaN HEMT current collapse effect,a simple method to verify GaN-based epitaxy material was raised.If the symmetry of back-to-back Schottky contact junction is good,the current collapse effect of AlGaN/GaN HEMT based on this epitaxy material can be neglected,and vice versa.The defects in AlGaN are with responsibility for inducing the asymmetry of I-V characteristic of back-to-back Schottky junction.In the other hand,the defects are the most important reason of AlGaN/GaN HEMT current collapse.The symmetry of I-V characteristic of back-to-back Schottky contact junction is an effective method to evaluate the GaN-based epitaxy material qualitatively.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第S1期109-111,122,共4页
Semiconductor Technology
基金
国家自然科学基金(60736033)
关键词
氮化镓
外延材料
背对背肖特基结
电流崩塌
缺陷
GaN
epitaxy material
back-to-back Schottky contact junction
current collapse
defects
