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基于并五苯/酞菁铅异质结的近红外光敏有机场效应管(英文) 被引量:2

Near Infrared Photoresponsive Organic Field-effect Transistors by Utilizing Pentacene / Lead Phthalocyanine Heterojunction
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摘要 采用并五苯(Pentacene)和酞菁铅(PbPc)两种有机材料作为有源层,制备了异质结有机光敏场效应管。在波长为808 nm、强度为124 mW/cm2的近红外光照条件下,异质结phOFET获得最大的光暗电流比达4.4×104,栅压为-50 V时的最大光响应度为118 mA/W,比单层酞菁铅phOFET分别高出766倍和785倍。在经过120 h后,器件的最大光暗电流比和最大光响应度分别稳定于5.4×104和326 mA/W附近。由于在异质结phOFET中采用了对近红外光具有高吸收效率的酞菁铅作为光敏层,而高空穴迁移率的并五苯材料作为靠近栅介质的沟道层,光生载流子的产生与传输能力得到了有效的提高。实验结果表明,基于并五苯/酞菁铅的有机异质结应用于光敏有机场效应管的结构设计中,可以使phOFET成为一种同时具有良好光敏性及稳定性的近红外光探测器件。 Photoresponsive organic field-effect transistors (phOFETs) were fabricated by utilizing organic heterojunction based on pentacene and lead phthalocyanine (PbPc). Under a near-infrared light illumination (wavelength 808 nm and a power intensity of 124 mW/cm2), the heterojunction photoresponsive organic field-effect transistors (HJ-phOFETs) exhibited a maximum photosensitivity of 4.4×104, and a maximum photoresponsivity of 118 mA/W, which were 766 times and 785 times higher than that of PbPc single-layer phOFET, respectively. It was observed that the maximum photosensitivity and the maximum photoresponsivity stabilized around 5.4×104 and 326 mA/W after 120 h, respectively. The high performance of HJ-phOFET is attributed to the utilization of PbPc as photosensitive layer which has high absorbance in near infrared region (NIR) and pentacene as channel layer with high hole mobility. These results indicate that the HJ-phOFET based on pentacene and PbPc is proved to be a NIR photodetector with excellent photosensitivity and stability.
出处 《发光学报》 EI CAS CSCD 北大核心 2014年第3期342-348,共7页 Chinese Journal of Luminescence
基金 国家自然科学基金(1097407) 教育部博士点基金(2011021111005)资助项目
关键词 异质结 并五苯 酞菁铅 近红外 光敏有机场效应管 Heterojunctions Light sensitive materials Nitrogen compounds Organic field effect transistors Photosensitivity
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参考文献25

  • 1Mukherjee B,Mukherjee M,Choi Y. Control over multifunctionality in optoelectronic device based on organic phototransistor[J].ACS Applied Materials & Interfaces,2010,(06):1614-1620. 被引量:1
  • 2Clark J,Lanzani G. Organic photonics for communications[J].Nature Photonics,2010,(07):438-446. 被引量:1
  • 3Chen D Q,Yao B,Fan G Y. Influence of donor-acceptor layer sequence on photoresponsive organic field-effect transistors based on palladium phthalocyanine and C60[J].Applied Physics Letters,2010,(16):163303-1631-5. 被引量:1
  • 4Marjanovi(c) N,Singh T B,Dennler G. Photoresponse of organic field-effect transistors based on conjugated polymer/fullerene blends[J].ORGANIC ELECTRONICS,2006,(04):188-194. 被引量:1
  • 5Kim F S,Guo X G,Watson M D. High-mobility ambipolar transistors and high-gain inverters from a donor-acceptor copolymer semiconductor[J].Advanced Materials,2010,(04):478-482. 被引量:1
  • 6Lou Y H,Xu M F,Wang Z K. Dual roles of MoO3-doped pentacene thin films as hole-extraction and multichargeseparation functions in pentacene/C60 heterojunction organic solar cells[J].Applied Physics Letters,2013,(11):113305-1131-4. 被引量:1
  • 7Wang H B,Wang X J,Huang H C. Isotype heterojunction between organic crystalline semiconductors[J].Applied Physics Letters,2008,(10):103307-1031-3. 被引量:1
  • 8Wang H B,Wang X J,Yu B. p-p isotype organic heterojunction and ambipolar field-effect transistors[J].Applied Physics Letters,2008,(11):113303-1131-3. 被引量:1
  • 9Yi M D,Huang J Y,Ma D G. High gain in hybrid transistors with BAlq3/Alq3 isotype heterostructure emitter[J].Applied Physics Letters,2008,(24):243312-2431-3. 被引量:1
  • 10Pan F,Tian H K,Qian X R. High performance vanadyl phthalocyanine thin-film transistors based on fluorobenzene end-capped quaterthiophene as the inducing layer[J].ORGANIC ELECTRONICS,2011,(08):1358-1363. 被引量:1

同被引文献34

  • 1BHARATH D, CHITHIRAVEL S, SASIKUMAR M, "et al.. A detailed study on the thermal, photo-physical and electro- chemical properties and OFET applications of D-Л-A-Л-D structured unsymmetrical diketopyrrolopyrrole materials [J]. RSC Adv., 2015, 5(115):94859-94865. 被引量:1
  • 2SMITS E C P, MATHIJSSEN S G J, VAN HAL P A, et al.. Bottom-up organic integrated circuits [J]. Nature, 2008, 455(7215) :956-959. 被引量:1
  • 3MARTfNEZ M T, TSENG Y C, ORMATEGUI N, et al, . Label-free DNA biosensors based on functionalized carbon nano- tube field effect transistors [J]. Nano Lett. , 2009, 9 (2) :530-536. 被引量:1
  • 4PENG W L, LIU Y C, WANG C X, et al.. A highly sensitive near-infrared organic photodetector based on oxotitanium phthalocyanine nanocrystals and light-induced enhancement of electron tunneling [J]. J. Mater. Chem. C, 2015,3(19) :5073-5077. 被引量:1
  • 5LI Y, ZHANG J P, LV W L, et al.. Substrate temperature dependent performance of near infrared photoresponsive organ- ic field effect transistors based on lead phthalocyanine [J]. Synth. Met. , 2015, 205:190-194. 被引量:1
  • 6SINHA S, WANG C H, MUKHERJEE M, et al.. The effect of gate dielectric modification and film deposition temperature on the field effect mobility of copper ( II ) phthalocyanine thin-film transistors [J]. J. Phys. D: Appl. Phys. , 2014, 47 (24) :245103. 被引量:1
  • 7DUALEH A, TI-TREAULT N, MOEHL T, et al.. Effect of annealing temperature on film morphology of organic-inorganic hybrid pervoskite solid-state solar ceils [Jl. Adv. Funct. Mater. , 2014, 24(21 ) :3250-3258. 被引量:1
  • 8LI Y Z, JI D Y, LIU J, et al.. Quick fabrication of large-area organic semiconductor single crystal arrays with a rapid an- nealing self-solution-shearing method [J]. Sci. Rep. , 2015, 5:13195-1-9. 被引量:1
  • 9SUN L, LI Y, REN Q, et al.. Toward ultrahigh red light responsive organic FETs utilizing neodymium phthalocyanine as light sensitive material [J]. IEEE Trans. Electron Devices, 2016, 63 ( 1 ) :452-458. 被引量:1
  • 10MELVILLE O A, LESSARD B H, BENDER T P. Phthalocyanine-based organic thin-film transistors: a review of recent advances [J-. ACS Appl. Mater. Interf. , 2015, 7(24) :13105-13118. 被引量:1

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