摘要
在发射极加一个镇流电阻可以解决在多个 HBT并联时 ,常常出现电流坍塌的问题 .研究了发射极镇流电阻对 In0 .4 9Ga0 .51 P/ Ga As HBT直流及高频特性的影响 。
The collapse of current often occurs in multi transistors heterojunction bipolar transistors.It is demonstrated that the emitter ballasting resistor can prevent the collapse of current.Effect of emitter ballasting resistor on In 0.49 Ga 0.51 P/GaAs HBT characteristics is studied and analyzed.
基金
国家重点基础研究发展规划资助项目 (编号 :G2 0 0 0 0 683 0 40 3 )~~
