摘要
The damaged and strain subsurface layers of semi insulating(SI) GaAs substrate were characterized non destructively by Raman back scattering.The study shows that the thicknesses of the damaged and strain layers are less than 3μm.The damaged and strain layer can be removed after being etched in H 2SO 4·H 2O 2·H 2O for 1.5 min.
The damaged and strain subsurface layers of semi insulating(SI) GaAs substrate were characterized non destructively by Raman back scattering.The study shows that the thicknesses of the damaged and strain layers are less than 3μm.The damaged and strain layer can be removed after being etched in H 2SO 4·H 2O 2·H 2O for 1.5 min.
