摘要
以通用电路仿真软件 PSPICE中的器件模型为基础 ,采用组合模型的方法建立了 IGBT模型 ,并对其静态特性和动态特性进行了仿真 。
Based on the existing built in models of PSPICE,by using the composite models methodes,the authors present with a composite insulated gate bipolar transister model.The comparison between simulation results and experiment results of the factory shows complete agreement in dynamic and static state behaviours of the IGBT.
出处
《河北科技大学学报》
CAS
2001年第1期16-21,共6页
Journal of Hebei University of Science and Technology
