摘要
主要阐述了一种新型P* PIN结构的硅光电二极管,采用N型硅衬底,经过氧化光刻后,先作一次很薄淡硼扩散,再进行浓硼扩散,这样形成高低发射结的方法,减薄死层厚度,减少光生载流子的复合,以提高光电转换效率。
A new P +PIN type Si photodiode is presented. After oxidation and photo fabrication on a Ntype Si substrate, it is diffused by a thin P layer, and then made by a thick P + again. So it formed a low-high emitter junction and reduced the inactive layer, decreased the photo-induced carrier's recombination, enhanced the conversion efficiency.
出处
《仪器仪表学报》
EI
CAS
CSCD
北大核心
2004年第z3期212-214,共3页
Chinese Journal of Scientific Instrument
