摘要
主要研究了GaAlAs/GaAs多层结构波导的ICP(inductiveIy coupled plasma)刻蚀,评述了使用PECVD制作的SiO2做掩膜的优点,分析了气体选择比对侧向钻蚀控制的影响,并初步分析了刻蚀损伤.比较了不同工艺参数对于刻蚀图形的影响,包括刻蚀侧壁角度,刻蚀表面平整度,选择比,侧向钻蚀等几个方面,并对ICP刻蚀对激光器性能的影响.通过对刻蚀图形的控制,使2 in.芯片内均匀性<±5%,侧壁角达到79°-81°,最后给出了经干法与湿法刻蚀后,器件的一些性能参数.
Inductively coupled plasma(ICP) etching of GaAlAs/GaAs multilayer wave-guide was mainly studied.The advantage of SiO2 deposited by PECVD was reviewed and the influence of selection and ratio of the reaction gases on controlling of lateral etching was analyzed,and the etching damage was preliminarily analyzed as well.It was compared that the effects of different parameters on the etching patterns including the slope angle of the lateral wall of the patterns,the roughness of the etched surface,the selection ratio and the etching damage of the lateral side,etc.Simultaneously,the influence of ICP etching on the performance of laser was analyzed.By controlling of the etched patterns,the homogeneity of a 2 ″ substrate is lower than ±5% and the slope angle of the lateral wall is in a range of 79 °～81 °.Finally,some characteristic parameters of devices obtained by dry and wet etching were given.
出处
《微细加工技术》
2007年第6期12-14,共3页
Microfabrication Technology
关键词
ICP
选择比
刻蚀损伤
ICP
selective ratio
etching damage
